Kyma Technologies offers a range of high-quality substrates for advanced semiconductor applications, focusing on gallium nitride (GaN) and gallium oxide (Ga2O3) materials. These substrates provide a solid foundation for the growth of high-performance devices in power electronics, optoelectronics, and photovoltaics.
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Kyma's new c-plane GaN substrates have improved defect density, very low pitting, and is now available in 4”. This new generation of bulk GaN from Kyma is an excellent starting point for specialty lighting, laser diodes, and the burgeoning market of vertical GaN power electronics.
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Kyma's polycrystalline GaN (polyGaN) materials are useful for applications that require higher purity and/or lower surface area than legacy sources.
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Kyma offers (010) orientation single crystal gallium oxide (ß-Ga2O3) substrates (and epiwafers) to support the development of epitaxial growth and device development in this exciting new materials system.
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