Crystalline β-Ga₂O₃ is an ultrawide bandgap semiconductor (4.8-4.9 eV) which exhibits breakdown fields as high as 8 MW/cm and a Baliga figure of merit 8x more than SiC and 4x more than GaN.

Kyma provides epitaxial Ga₂O₃ layers grown by Kyma’s proprietary halide vapor phase epitaxy (HVPE) technology or [coming soon] via metalorganic chemical vapor deposition (MOCVD), specializing in growth on (001) and (010) bulk substrates. Our epilayers have high structural quality that replicates the underlying substrates, and Kyma can provide thick lightly doped layers on (001) substrates (over 10µm thickness) with free carrier concentrations <10¹⁶ cm^-3. Epigrowth can also be provided on substrates provided by Kyma in the (010) orientation or on customer provided substrates of other orientations.

We welcome requests on what is possible for custom thicknesses, doping schemes, or growth on alternative substrates up to 100mm in size.