Gallium Oxide Epiwafers

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Gallium Oxide Epiwafers

Kyma grows Ga2O3 epiwafers on bulk (001) and (010) β-Ga2O3 substrates with high structural and electrical quality for power electronics device applications.
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Thick and lightly doped layers on bulk (001) substrates are now available for vertical device applications. The standard epiwafer configuration with a free carrier concentration of 1x1016 cm-3 and thickness of 10 microns is available on conductive 2" and 100mm (001) substrates, and additionally thicker and alternative doping concentrations are available upon request.
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Customers can supply their own β-Ga2O3 substrates, or purchase directly from Kyma. Please reach out to start a discussion about what is possible.

Product Details

Features

  • High-quality β-Ga2O3 epilayers grown on β-Ga2O3 substrates
  • Exceptional structural quality matching the substrate
  • High room-temperature carrier mobilities exceeding 100 cm²/V·s
  • Low-temperature carrier mobilities up to 500 cm²/V·s
  • Customizable substrate options (customer-supplied or Kyma-provided)

Benefits

  • Enables high-performance power devices with improved efficiency
  • Supports high-voltage and high-power operation
  • Facilitates low-loss and high-frequency switching
  • Enhances device reliability and lifetime
  • Leverages Kyma's expertise in alternative substrate technologies

Applications

  • Power MOSFETs and switching devices
  • High-voltage converters and inverters
  • Solid-state circuit breakers and power distribution
  • Renewable energy systems (solar, wind)
  • Electric vehicle and traction drive systems

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