Gallium Oxide Epiwafers

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Gallium Oxide Epiwafers

Kyma's ß-Ga2O3 epiwafers are grown on (010) ß-Ga2O3 substrates and have high electrical quality and also high structural quality that matches that of the substrate.High Mobilities Achieved: Recent epiwafers produced at Kyma with carrier concentrations in the 1 to 2 x 1017 cm-3 range show room temperature carrier mobilities that routinely exceed 100 cm2/V-s and as high as 123 cm2/V-s, and low temperature mobilities as high as 500 cm2/V-s, with the exact values depending on the doping level and the structural quality of the ß-Ga2O3 substrate.Customers can supply their own (010) ß-Ga2O3 substrates. Additionally, Kyma is gaining experience in growing ß-Ga2O3 epilayers on other orientations of ß-Ga2O3 substrates as well as on alternative substrates such as sapphire. We welcome customer inquiries about what is possible.

Product Details


  • High-quality β-Ga2O3 epilayers grown on (010) β-Ga2O3 substrates
  • Exceptional structural quality matching the substrate
  • High room-temperature carrier mobilities exceeding 100 cm²/V·s
  • Low-temperature carrier mobilities up to 500 cm²/V·s
  • Customizable substrate options (customer-supplied or Kyma-provided)


  • Enables high-performance power devices with improved efficiency
  • Supports high-voltage and high-power operation
  • Facilitates low-loss and high-frequency switching
  • Enhances device reliability and lifetime
  • Leverages Kyma's expertise in alternative substrate technologies


  • Power MOSFETs and switching devices
  • High-voltage converters and inverters
  • Solid-state circuit breakers and power distribution
  • Renewable energy systems (solar, wind)
  • Electric vehicle and traction drive systems]

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