External Metal-Halide Sources

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External Metal-Halide Sources

Kyma's external metal-halide sources enable a robust, cost-effective extension of existing crystal growth capabilities to enable new materials compositions. Kyma has over a decade of experience using metal halide source technology to transport Ga, Al, Fe, Mn, Mg, and Cr. Applications of Kyma's external metal-halide sources include the addition of various metal dopants to existing growth tools, the conversion of a GaN growth tool to one that can grow binaries and alloys of (Al,Ga)N, and the conversion of a Ga2O3 growth tool to one that can grow binaries and alloys of (Al,Ga)2O3. Additionally, we expect the external metal-halide source to work with indium (In) which Kyma hopes to implement in its own growth efforts in the near future.
Key features of Kyma's external metal-halide sources include:
External delivery of solid precursorEasy temperature controlCustomization available

Product Details

Features

  • External delivery of solid metal precursors (e.g., Ga, Al, Fe, Mn, Mg, Cr, In)
  • Precise temperature control for optimal precursor transport
  • Customizable configurations for seamless integration with growth tools
  • Compatibility with HVPE, MOCVD, MBE, and other epitaxial growth techniques

Benefits

  • Expands material composition capabilities for existing growth systems
  • Enables doping and alloying with various metal species
  • Cost-effective solution for process versatility and material exploration
  • Leverages Kyma's extensive experience in metal halide source technology
  • Streamlines transition to new material systems and device applications

Applications

  • Introduction of metal dopants for electronic and optoelectronic materials
  • Growth of III-nitride alloys (e.g., (Al,Ga)N) for high-power electronics
  • Synthesis of oxide alloys (e.g., (Al,Ga)2O3) for power devices
  • Exploration of novel compound semiconductor materials and heterostructures
  • Doping and alloying for emerging applications in electronics and photonics

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