GaN on QST® Templates

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GaN on QST® Templates

Kyma’s 200-mm HVPE GaN on QST® Templates consist of 10 microns of HVPE GaN grown on 200-mm diameter QST® substrates provided by Qromis, Inc. The QST® substrate is CMOS-fab friendly and has a thermal expansion coefficient which is closely matched to GaN's which enables thick GaN growth while maintaining low bow. The thick HVPE GaN overlayer has a low defect density, is of high structural quality, and presents an epi-ready surface for GaN device layer growth.Is 200-mm too big for your application? Kyma has a process for creating smaller form factor HVPE GaN on QST® Templates, such as 1-inch squares. Other form factors such as 150-mm diameter are also possible - just ask us!

Product Details


  • Low defect density and high crystalline quality GaN layers
  • Large-area templates suitable for mass production
  • Customizable substrate compositions and orientations
  • Compatibility with various growth techniques (MOCVD, MBE)


  • Enhanced device performance and breakdown characteristics
  • Improved thermal management and heat dissipation
  • Reduced manufacturing costs compared to bulk GaN substrates
  • Increased product yield and process reproducibility


  • High-Power and High-Frequency Transistors (HEMTs)
  • Power Amplifiers for Wireless Communications
  • Power Conversion Systems for Renewable Energy
  • High-Brightness LEDs and Laser Diodes
  • High-Temperature and Radiation-Resistant Electronics

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