Custom III-N Epiwafers

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Custom III-N Epiwafers

The KO-Switch™ is the highest power semiconductor switch of its size with a sub-nanosecond response time. Applications include electric circuit protection, pulsed power, ultra wideband (UWB) radar, and arbitrary waveform generation (AWG).The KO-Switch™ utilizes a specially tailored version of Kyma’s bulk semi-insulating GaN, KO-GaN™, which supports high blocking voltage and low on-resistance. Kyma’s KO-GaN™ materials are grown by a patented and proprietary process based on hydride vapor phase epitaxy (HVPE) and are designed to be highly resistive in the dark yet highly conductive when properly illuminated.

Product Details


  • Custom-engineered III-N epilayer structures (GaN, AlN, InN, and alloys)
  • Flexible substrate options (sapphire, silicon, SiC, and more)
  • Scalable wafer sizes (2-inch, 4-inch, and larger diameters)
  • Epilayer design and optimization support
  • Integrated device fabrication services available


  • Tailored material properties for specific device requirements
  • Access to a wide range of epitaxial growth techniques
  • Expertise in innovative substrate technologies
  • Streamlined collaboration from material design to device fabrication
  • Small-volume and prototype run capabilities


  • Light-emitting diodes (LEDs) and laser diodes
  • High-power and high-frequency transistors (HEMTs)
  • Acoustic wave filters and resonators
  • Photodetectors and solar-blind UV sensors
  • Power switching devices and power amplifiers

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