[Also see GaN Based Photoconductive Semiconductor Switch (PCSS) Devices]

2018

• Next-Generation Photomultiplier Detectors Using Transmissive III-Nitride Semiconductor Electrodes NLV-049-16, Year 3 of 3 - R. Buckles et al., acknowledges Jacob Leach (Kyma Technologies)

2017

• Next-Generation Photomultiplier Detectors Using Transmissive III-Nitride Semiconductor Electrodes - by R. Buckles and K. Sun, acknowledges Kyma's technical assistance

2016

• Next-Generation Photomultiplier Detectors Using Transmissive III-Nitride Semiconductor Electrodes - by R. Buckles et al., acknowledges Kyma's technical assistance

2007

• Fabrication and device characteristics of Schottky-type bulk GaN-based “visible-blind” ultraviolet photodetectors - Y. Zhou et al., Kyma co-authored paper
• AlxGa1−xN Ultraviolet Avalanche Photodiodes Grown on GaN Substrates - D. Yoo et al., Kyma co-authored paper
• Growth and Characterization of High-Performance GaN and AlxGa1−xN Ultraviolet Avalanche Photodiodes Grown on GaN Substrates, RD Dupuis et al., Kyma co-authored paper

2006

• GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition - J. Limb et al., cites Kyma's materials