PureGaN^tm is a breakthrough in GaN quality that unlocks the true versatility and value of vertical GaN power devices. Kyma's proprietary HVPE technology allows thick GaN films with extremely high chemical purity to be grown. When making the n-type drift layers for vertical power devices, the free electron concentration of the undoped films can be made to be much lower than GaN produced by other methods. The key to our technology lies in our reactor design. We keep out the background impurities that unintentionally dope as well as those that compensate the films:

•No Carbon
•No un-wanted Silicon
•No Oxygen

Without these compensating impurities, PureGaN^tm is capable of free electron concentration in the low 10¹⁵ cm^-3 levels. High voltage device designers can use these films to build devices in doping regimes that are unavailable elsewhere.  Vertical GaN power diodes and transistors capable of blocking > 1.2kV are now possible thanks to PureGaN^tm. For more details contact us.

Kyma is now offering 1.2kV capable films on 2" and 4" bulk GaN substrates and wants to talk to you about your epi needs for >1.2kV devices.