[Also see GaN Based RF & Microwave Devices]

2018

• 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes - T. A. Growden et al., cites Kyma's materials
• Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures - T. A. Growden et al., cites Kyma's materials

2017

• AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN - D. Storm et al., cites Kyma's materials

2013

• Temperature-dependence of negative differential resistance in GaN/AlGaN resonant tunneling structures - D. Li et al., cites Kyma's materials