[Also see GaN Based Resonant Tunneling Diode (RTD) Devices]

2018

• RF GaN/Si HEMT Growth Development Using Single Wafer MOCVD Technology - M. Pan et al., cites Kyma materials

2014

• Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates - D. Deen et al., Kyma co-authored paper

2013

• High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrate - D. Meyer et al., Kyma co-authored paper
• Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges - N. Killat et al., Kyma co-authored paper
• Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates - D. Storm et al., Kyma co-authored paper

2012

• Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma assisted molecular beam epitaxy - D. Storm et al., Kyma co-authored paper
• Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates - M. Tapajna et al., Kyma co-authored paper
• Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates - N. Killat et al., Kyma co-authored paper

2011

• Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates, SM Eichfeld, et al., Kyma co-authored paper
• Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates, JH Leach et al., Kyma led & co-authored paper

2010

• Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures - D. Storm et al., Kyma co-authored paper
• Carrier velocity in InAlN/AlN/GaN heterostructure field effect transistors on Fe-doped bulk GaN substrates - J. Leach et al., Kyma co-authored paper
• InAlN/GaN heterostructure field-effect transistors on Fe-doped semi-insulating GaN substrates, M. Wu et al., Kyma co-authored paper
• Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates, JH Leach et al., Kyma-led & co-authored paper
• New twists in LEDs and HFETs based on nitride semiconductors, JH Leach et al., references Kyma's materials

2009

• Modulation of mobility in homoepitaxially‐grown AlGaN/GaN heterostructures, JA Grenko et al., Kyma co-authored paper

2008

• Semi-insulating GaN substrates for high-frequency device fabrication - J. Freitas Jr. et al., Kyma co-authored paper

2007

• Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates - D. Storm et al., Kyma co-authored paper
• AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization - D. Storm et al., Kyma co-authored paper

2006

• Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates - D. Storm et al., Kyma co-authored paper