[Also see GaN Based Photoconductive Semiconductor Switch (PCSS) Devices]

2018

• GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000V using local substrate removal and AlN ultra-wide bandgap - E. Dogmus et al., Kyma's assistance is acknowledged

2016

• IVT measurements of GaN power Schottky diodes with drift layers grown by HVPE on HVPE GaN substrates - R. Tompkins et al., Kyma co-authored paper

2014

• GaN Power Schottky Diodes with Drift Layers Grown on Four Substrates - R. Tompkins et al., Kyma co-authored paper

2011

• Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate - Y. Wang et al., Kyma co-authored paper
• Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer, Y. Wang et al., Kyma co-authored paper

2010

• In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation, H. Xu et al., Kyma co-authored paper

2006

• Electrical characteristics of bulk GaN-based Schottky rectifiers with ultrafast reverse recovery - Y. Zhou et al., Kyma co-authored paper