Gallium Nitride (GaN) Templates
In the field of nitride semiconductors, a “GaN template” refers to a composite substrate which includes a thin layer of GaN deposited epitaxially on a foreign substrate. The thickness of the nitride layer is usually between 1 and 250 microns. Kyma’s GaN templates are built on sapphire as well as silicon substrates and are available in 2”, 3”, and 100mm diameter. They exhibit industry leading low defect densities and are epi ready.
Kyma GaN templates grown by HVPE provide a high purity GaN buffer for subsequent device epitaxy.
Typical customer benefits include:
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Elimination of long (2-5um) MOCVD or MBE undoped buffer growth
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HVPE based GaN epitaxy has higher purity and transparency than MOCVD based GaN epitaxy
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In high volume, HVPE based templates will have:
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Significantly lower growth time/cost vs MOCVD templates due to the much higher growth rates possible with HVPE
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Lower raw material costs as metalorganic gallium sources are replaced with metal gallium and ammonia usage is 1/10th that of MOCVD
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Kyma Technologies offers the following lines of GaN Templates:
- N- GaN Templates on Sapphire
- N+ GaN Templates on Sapphire
- Semi-Insulating GaN Templates on Sapphire
- N- GaN Templates on Silicon
Specification Sheets
- GaN on Sapphire Specification Sheet
- Grades: Production and Research
- Sizes: 2"-4"
- GaN thickness: 5um and custom (500nm-150um)
- GaN on Silicon Specification Sheet
- Grades: Production and Research
- Sizes: 2"-4"
- GaN thickness: 500nm and custom (100nm-500nm)
