Template Products
In the field of nitride semiconductors, a “template” refers to a composite substrate which includes a thin layer of material deposited epitaxially on a foreign substrate such as sapphire, silicon or silicon carbide. Kyma Technologies offers Aluminum Nitride (AlN), Gallium Nitride (GaN) templates and Aluminum Gallium Nitride (AlGaN) templates. The thickness of the nitride layer is usually between 25 and 1,000nm for AlN, 1 and 250 microns for GaN or 1 and 5 microns for AlGaN. Kyma’s nitride templates are built on sapphire as well as silicon substrates and are available in 2”, 3" and 100mm diameter. Kyma's AlN template product line is available on substrate diameters of up to 300mm in diameter. They exhibit industry leading low defect densities and are epi ready with low surface roughness.
For more details on each nitride template product, follow the links below:
Specification Sheet Characterization Methods
Characterization of products as shown in our specification sheets is completed using the following methods:
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Wafer thickness, Bow and TTV are determined by a Sigmatech thickness mapper for round substrates. Square substrates are measured manually at predetermined points on the wafers.
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Wafer orientation is determined by x-ray diffraction
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Conductivity is determined by Lehighton (n-type, semi-insulating) and/or Corema measurements (semi-insulating) and/or Hall measurements for our boule recipes, but are not made on all wafers shipped.
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Dislocation density is determined via etch pit density measurements followed by AFM and/or micro-cathodoluminescence (Micro-CL), but are not made on all wafers shipped.
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Macro defects are on the surface of the wafer and are counted by visual inspection.
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Surface roughness information is determined by atomic force microscopy (AFM) for the front surface finish. The typical image size for the measurement is 20x20 microns.