The primary benefit of a GaN substrate is the exact lattice and thermal expansion match with subsequent GaN epitaxy. Defect densities of our typical nitride homoepitaxial layers can be reduced up to 5 orders of magnitude from the defect levels that are present in comparable heteroepitaxial growth on sapphire or silicon carbide.

Kyma can offer epitaxy to our customers for standard structures such as LED or HEMT layers, as well as more exotic structures that your application might demand.

Gallium Nitride Epitaxial Device Layers

• LED, HEMT, or other epitaxial layers on GaN substrates
• Click here to contact us with your exact requirements