In the field of nitride semiconductors, “template” refers to a composite substrate which includes a thin layer of GaN or AlN deposited epitaxially on a foreign substrate such as sapphire or silicon carbide. The thickness of the nitride layer is usually between 1 and 250 microns.

Kyma’s GaN templates are built on sapphire and are available in 2”, 3”, and 4” diameter.  They exhibit industry leading low defect densities of ~10⁷ cm^-2 or lower and are epi ready with low surface roughness.

GaN and AlN Templates - Thick Epitaxial layers on Sapphire/SiC

• 2”, 3”, and 4” rounds
• 5, 50, & 150 micron GaN available (thicker on request)
• 1 micron AlN available
• Specification sheet
• Click here to inquire

Specification Sheet Characterization Methods

Characterization of gallium nitride wafers as shown in our specification sheets is completed using the following methods:

• Wafer thickness, Bow and TTV are determined by a Sigmatech thickness mapper for round substrates. Square substrates are measured manually at predetermined points on the wafers.
• Wafer orientation is determined by x-ray diffraction
• Conductivity is determined by Lehighton (n-type, semi-insulating) and/or Corema measurements (semi-insulating) and/or Hall measurements for our boule recipes, but are not made on all wafers shipped.
• Dislocation density is determined via etch pit density measurements followed by AFM and/or micro-cathodoluminescence (Micro-CL), but are not made on all wafers shipped.
• Macro defects are on the surface of the wafer and are counted by visual inspection.
• Surface roughness information is determined by atomic force microscopy (AFM) for the front surface finish. The typical image size for the measurement is 20x20µm.