Kyma Technologies Gallium Nitride Substrates


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GaN Substrates | Templates (thick epi) | GaN-EPI | Poly GaN

Gallium Nitride (GaN) Substrates

Gallium nitride substrates are matched in lattice constant and thermal expansion properties for epitaxial growth of doped GaN layers needed for fabrication of GaN-based devices. This eliminates stress and defects induced by growing GaN epi-layers on non-nitride substrates such as sapphire or silicon carbide, which increase device fabrication complexity and cost and compromise device performance. Kyma's high purity GaN substrate allows GaN-based device manufacturers to eliminate processing steps and improve device quality over those grown on other substrates.

Kyma currently offers GaN substrates to fill the needs of many applications. Detailed product descriptions and specification sheets are listed below:

C-Plane, N-Type Gallium Nitride (GaN) Substrates

2" rounds, 18x18mm and 10x10mm squares
Specification sheet
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C-Plane, Semi-Insulating Gallium Nitride (GaN) Substrates

18x18mm and 10x10mm squares
Specification sheet
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Non-polar, N-Type Gallium Nitride (GaN) Substrates

50mm² and 100mm² bars
M-plane [1-100], A-plane [11-20]
Other planes available on request
Specification sheet
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Specification Sheet Characterization Methods

Characterization of gallium nitride wafers as shown in our specification sheets is completed using the following methods:

Wafer thickness, Bow and TTV are determined by a Sigmatech thickness mapper for round substrates. Square substrates are measured manually at predetermined points on the wafers.
Wafer orientation is determined by x-ray diffraction
Conductivity is determined by Lehighton (n-type, semi-insulating) and/or Corema measurements (semi-insulating) and/or Hall measurements for our boule recipes, but are not made on all wafers shipped.
Dislocation density is determined via etch pit density measurements followed by AFM and/or micro-cathodoluminescence (Micro-CL), but are not made on all wafers shipped.
Macro defects are on the surface of the wafer and are counted by visual inspection.
Surface roughness information is determined by atomic force microscopy (AFM) for the front surface finish. The typical image size for the measurement is 20x20 microns.

GaN Substrates | Templates (thick epi) | GaN-EPI | Poly GaN