Non-Polar and Semi-Polar Bulk Gallium Nitride (GaN) Substrates

Semiconductor epitaxy is best performed on native substrates in order to minimize interface effects and defect formation. Gallium nitride epitaxy on Kyma GaN substrates greatly improves a number of important device properties of subsequent GaN epitaxy when compared with heteroepitaxial GaN on SiC, sapphire, or silicon. The benefits in lattice constant mismatch, dislocation density and thermal conductivity can be seen in the table below.

Bulk GaN vs Non-native Substrates
	GaN on Bulk GaN^†	GaN on SiC	GaN on sapphire	GaN on Silicon
Lattice Constant Mismatch	0%	3.5% mismatch	14% mismatch	17% mismatch
Dislocation Density	10⁴ - 10⁶ / cm²	1 x 10⁹ / cm²	5 x 10⁹ / cm²	1 x 10¹¹ / cm²
Thermal Conductivity	2.5 W/cm-K	1.3 W/cm-K	1.2 W/cm-K	1.0 W/cm-K
^†Kyma does not currently sell epitaxy on Bulk GaN. The data listed here is from a wide variety of customer reported epitaxy results.

Kyma's high purity GaN substrate allows GaN-based device manufacturers to eliminate interlayers, processing steps, and improve device quality over those grown on any other substrate. Detailed product descriptions and specification sheets are listed below.

All substrates have a typical dislocation density of 5x10⁶and epi-ready surface finish.

Specification Sheets

Non-Polar Bulk GaN Substrate Specification Sheet