Kyma’s product portfolio is centered on several advanced nitride semiconductor materials, including free-standing gallium nitride (GaN), GaN templates, aluminum nitride (AlN) templates, GaN device epiwafers, and high-purity polycrystalline GaN. Kyma also offers diamond wire for precision slicing of crystalline materials as well as substrate accessories. Our products listed below address various applications in all stages of development, from cutting edge R&D all the way to mass manufacturing. Please contact us to discuss your application and how we might be of assistance.
Template Products
AlN Templates
- Description: Kyma AlN templates offer a low cost alternative to 2-step nitride nucleation processes
- Product: 10-1000nm of AlN epitaxy on sapphire, SiC, or Si substrates
Click here to see AlN Template Product Specifications on Sapphire
Click here to see AlN Template Product Specifications on Silicon
GaN Templates
- Description: Kyma GaN templates allow direct growth of epitaxial layers, skipping thick GaN buffers
- Product: 1-150μm of GaN epitaxy on sapphire, SiC, or Si substrates
Click here to see GaN Template Product Specifications on Sapphire
Click here to see GaN Template Product Specifications on Silicon.
AlGaN Templates
- Description: Kyma AlGaN templates offer rapid and materials-efficient template manufacturing process
- Product: 5μm of AlGaN epitaxy on c-plane sapphire substrates
Click here to see GaN Template Product Specifications on Sapphire
Bulk Products
C-Plane Bulk GaN Substrates
- Description: c-plane bulk GaN substrates have orders of magnitude fewer defects per cm2 than GaN heteroepitaxy
- Product: Freestanding bulk GaN with epi-ready surface
Click here to see N+ Bulk GaN Substrate Product and Specifications
Click here to see N- Bulk GaN Substrate Product and Specifications
Click here to see Semi-Insulating Bulk GaN Substrate Product and Specifications
Non-Polar and Semi-Polar Bulk GaN Substrates
- Description: Non-polar and semi-polar bulk GaN substrates have orders of magnitude fewer defects per cm2 than GaN heteroepitaxy
- Product: Freestanding bulk GaN with epi-ready surface
Click here to see Non-Polar Product Specifications
Click here to see Semi-Polar Product Specifications
High Purity Polycrystalline GaN
- Description: High purity (5N or 6N purity) polycrystalline Gallium Nitride
- Product: Polycrystalline GaN pellets or sputtering targets
Click here to see Non-Polar Product Specifications
More Products and Services
Epitaxial Device Wafers
- Description: Kyma’s epitaxial device wafers are ideal for any nitride structure
- Product:
- a) Customer specified device structure (LED, HEMT, Schottky)
- b) Basic epitaxial layers (n-type, p-type, semi-insulating)
Diamond Wire
- Description: Abrasive wire used to cut high hardness materials like GaN, SiC, sapphire
- Product: Steel core plus metal matrix and diamond grit
Click here to see Diamond Wire Product Specifications
Custom Services
- Description: Wafer characterization and processing services.
- Product: Precision wafer processing services and characterization services.
Accessories
- Description: Sapphire place-holders and comparison geometry wafers.
- Product: 2-inch diameter, sapphire place-holders and comparison geometry wafers.