Gallium Nitride (GaN) Epi-wafers

The primary benefit of a GaN substrate is the exact lattice and thermal expansion match with subsequent GaN epitaxy. Defect densities of our typical nitride homoepitaxial layers can be reduced up to 5 orders of magnitude from the defect levels that are present in comparable heteroepitaxial growth on sapphire, silicon carbide, or silicon.

Kyma can offer epitaxy via partners to our customers for standard structures such as LED or HEMT layers, as well as more exotic structures that your application might demand.

Gallium Nitride Epitaxial Device Layers

• LED, HEMT, Schottky or other customer specified epitaxial layers on GaN, sapphire or silicon carbide or other customer specified substrates

• Basic Epitaxial Layers (n-type,k p-type, semi-insulating

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