Gallium Nitride (GaN) and Aluminum Nitride (AlN) Templates

In the field of nitride semiconductors, “template” refers to a composite substrate which includes a thin layer of GaN or AlN deposited epitaxially on a foreign substrate such as sapphire or silicon carbide. The thickness of the nitride layer is usually between 1 and 250 microns.

Kyma’s GaN templates are built on sapphire and are available in 2”, 3”, and 4” diameter. They exhibit industry leading low defect densities and are epi ready with low surface roughness.

GaN and AlN Templates - Thick Epitaxial layers on Sapphire/SiC

• 2”, 3”, and 4” rounds
• 5, 50, & 150 micron GaN available (thicker on request)
• 1 micron AlN available
• Specification sheet
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Specification Sheet Characterization Methods

Characterization of gallium nitride wafers as shown in our specification sheets is completed using the following methods:

• Wafer thickness, Bow and TTV are determined by a Sigmatech thickness mapper for round substrates. Square substrates are measured manually at predetermined points on the wafers.
• Wafer orientation is determined by x-ray diffraction
• Conductivity is determined by Lehighton (n-type, semi-insulating) and/or Corema measurements (semi-insulating) and/or Hall measurements for our boule recipes, but are not made on all wafers shipped.
• Dislocation density is determined via etch pit density measurements followed by AFM and/or micro-cathodoluminescence (Micro-CL), but are not made on all wafers shipped.
• Macro defects are on the surface of the wafer and are counted by visual inspection.
• Surface roughness information is determined by atomic force microscopy (AFM) for the front surface finish. The typical image size for the measurement is 20x20µm.