Gallium Nitride (GaN) Substrates
Semiconductor epitaxy is best performed on native substrates in order to minimize interface effects and defect formation. Gallium nitride epitaxy on Kyma GaN substrates greatly improves a number of important device properties of subsequent GaN epitaxy when compared with heteroepitaxial GaN on SiC, sapphire, or silicon.
| GaN on Bulk GaN | GaN on SiC | GaN on sapphire | GaN on Silicon | |
|---|---|---|---|---|
| Lattice Constant Mismatch | 0% | 3.5% mismatch | 14% mismatch | 17% mismatch |
| Dislocation Density | 104 - 106 / cm2 | 1 x 109 / cm2 | 5 x 109 / cm2 | 1 x 1011 / cm2 |
| Thermal Conductivity | 2.5 W/cm-k | 1.3 W/cm-k | 1.2 W/cm-k | 1.0 W/cm-k |
Kyma's high purity GaN substrate allows GaN-based device manufacturers to eliminate interlayers, processing steps, and improve device quality over those grown on any other substrate. Detailed product descriptions and specification sheets are listed below:
| n-type c-plane Bulk GaN (00.2) (Specification sheet) | ||||
|---|---|---|---|---|
| Grade | Macro Defects | Substrate Diameter | Part Number | |
| Laser | <1/cm2 | 10x10mm | G.10.N.A | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. |
| 18x18mm | G.18.N.A | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||
| 30mm round | G.30.N.A | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||
| LED | <5/cm2 | 10x10mm | G.10.N.B | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. |
| 18x18mm | G.18.N.B | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||
| 30mm round | G.30.N.B | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||
| Research | <10/cm2 | 10x10mm | G.10.N.C | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. |
| 18x18mm | G.18.N.C | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||
| 30mm round | G.30.N.C | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||
| Rider | >10/cm2 | 10x10mm | G.10.N.D | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. |
| 18x18mm | G.18.N.D | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||
| 30mm round | G.30.N.D | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||
| Custom | Alternate polish: | single side, double side optical, double side epi-ready, N-face epi-ready only | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | |
| Don’t see what you need? This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||||
| Semi-insulating c-plane Bulk GaN (00.2) (Specification sheet) | ||||
|---|---|---|---|---|
| Grade | Macro Defects | Substrate Diameter | Part Number | |
| Production | <1/cm2 | 10x10mm | G.10.SE.A | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. |
| 18x18mm | G.18.SE.A | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||
| 30mm round | G.30.SE.A | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||
| Research | <5/cm2 | 10x10mm | G.10.SE.B | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. |
| 18x18mm | G.18.SE.B | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||
| 30mm round | G.30.SE.B | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||
| Test | >10/cm2 | 10x10mm | G.10.SE.C | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. |
| 18x18mm | G.18.SE.C | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||
| 30mm round | G.30.SE.C | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||
| Rider | >10/cm2 | 10x10mm | G.10.SE.D | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. |
| 18x18mm | G.18.SE.D | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||
| 30mm round | G.30.SE.D | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||
| Custom | Alternate polish: | single side, double side optical, double side epi-ready, N-face epi-ready only | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | |
| Don’t see what you need? This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||||
| Non-polar and semi-polar bulk GaN (Specification sheet) | |||||
|---|---|---|---|---|---|
| Grade | Macro Defects | Substrate Diameter | Planes Available | Part Number | |
| Laser | <1/cm2 | 5x10mm | a (11.0), m (10.0), (11.2), (10.3), (10.1), and (20.1) | A.5.N, M.5.N, S.5.N. | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. |
| irregular | A.IR.N, M.IR.N, S.IR.N | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | |||
| Custom | Alternate polish: | single side, double side optical, double side epi-ready, N-face epi-ready only | This e-mail address is being protected from spambots. You need JavaScript enabled to view it. | ||
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Specification Sheet Characterization Methods
Characterization of gallium nitride wafers as shown in our specification sheets is completed using the following methods:
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Wafer thickness, Bow and TTV are determined by a Sigmatech thickness mapper for round substrates. Square substrates are measured manually at predetermined points on the wafers.
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Wafer orientation is determined by x-ray diffraction
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Conductivity is determined by Lehighton (n-type, semi-insulating) and/or Corema measurements (semi-insulating) and/or Hall measurements for our boule recipes, but are not made on all wafers shipped.
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Dislocation density is determined via etch pit density measurements followed by AFM and/or micro-cathodoluminescence (Micro-CL), but are not made on all wafers shipped.
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Macro defects are on the surface of the wafer and are counted by visual inspection.
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Surface roughness information is determined by atomic force microscopy (AFM) for the front surface finish. The typical image size for the measurement is 20x20 microns.